Organic Luminescence Transistor Device and Manufacturing Method Thereof

ABSTRACT

The invention is an organic luminescence transistor device including: a substrate; an assistance electrode layer provided on a side of an upper surface of the substrate; an insulation film provided on a side of an upper surface of the assistance electrode layer; a first electrode provided locally on a side of an upper surface of the insulation film, the first electrode covering an area of a predetermined size; an electric-charge-injection inhibiting layer provided on an upper surface of the first electrode, the electric-charge-injection inhibiting layer having a shape larger than that of the first electrode in a plan view; an electric-charge injection layer provided on the side of an upper surface of the insulation film at an area not provided with the first electrode or the electric-charge-injection inhibiting layer and on an upper surface of the electric-charge-injection inhibiting layer; a luminescent layer provided on an upper surface of the electric-charge injection layer; and a second electrode layer provided on a side of an upper surface of the luminescent layer.

FIELD OF THE INVENTION

This invention relates to an organic luminescence transistor device anda manufacturing method thereof. In more details, in a vertical type oforganic luminescence transistor device, this invention relates to anorganic luminescence transistor device and a manufacturing methodthereof wherein a current control between an anode and a cathode isfacilitated.

BACKGROUND ART

An organic electroluminescence device has a simple structure, so that ithas been expected as a luminescence device for the next generationdisplay that is thinner, lighter, larger area and less costly. Thus,recently, the organic electroluminescence device has been studied hard.

As a driving method for driving the organic electroluminescence device,an active-matrix type of filed effect transistor (FET) that uses a thinfilm transistor (TFT) is considered to be advantageous in terms ofoperational speed and power consumption. On the other hand, as asemiconductor material for forming the thin film transistor, inorganicsemiconductor materials such as a silicon semiconductor or a chemicalcompound semiconductor have been studied, but recently, an organic thinfilm transistor (organic TFT) that uses an organic semiconductormaterial has been also studied hard. The organic semiconductor materialhas been expected as a semiconductor material of the next generation.However, the organic semiconductor material has problems of a lowercharge-transfer level and of a higher resistance, compared with theinorganic semiconductor material.

Regarding the filed effect transistor, a vertical FET structured type ofstatic induction transistor (SIT) wherein the structure thereof isvertically arranged is recognized to be advantageous because a channelwidth of the transistor can be shortened, the whole electrode of thesurface thereof can be effectively used so that rapid response and/orpower enhancement can be achieved, and interface effect can be madesmaller.

Accordingly, recently, based on the above advantageous features of thestatic induction transistor (SIT), an organic luminescence transistorcomposed of such an SIT structure and an organic electroluminescencedevice structure has been studied to be developed (for example, KazuhiroKudo, “Current Conditions and Future Prospects of Organic Transistor”,J. Appl. Phys. Vol. 72, No. 9, pp. 1151-1156 (2003); JP-A-2003-324203(in particular, claim 1); JP-A-2002-343578 (in particular, FIG. 23)).

FIG. 18 is a schematic sectional view showing an example of an organicluminescence transistor composed of an SIT structure and an organicelectroluminescence device structure, described in the above document“Current Conditions and Future Prospects of Organic Transistor”. Asshown in FIG. 18, the organic luminescence transistor 101 has a verticaltype of FET structure wherein a source electrode 103 consisting of atransparent electrode film, a hole-transfer layer 104 in which slit-likeSchottky electrodes 105 are embedded, a luminescent layer 106, and adrain electrode 107 are layered on a glass substrate 102 in this order.

As described above, in the composite type of organic luminescencetransistor 101, the slit-like Schottky electrodes 105 are embedded inthe hole-transfer layer 104. A Schottky barrier junction is formedbetween the hole-transfer layer 104 and the gate electrode 105, so thata depletion layer is formed in the hole-transfer layer 104. Theexpansion of the depletion layer is varied by the gate voltage (voltageapplied between the source electrode 103 and the gate electrode 105).Thus, a channel width is controlled by varying the gate voltage, and anamount of generated charge is varied by controlling a voltage to beapplied between the source electrode 103 and the drain electrode 107.

FIG. 19 is a schematic sectional view showing an example of an organicluminescence transistor composed of an FET structure and an organicelectroluminescence device structure, described in JP-A-2002-343578. Asshown in FIG. 19, the organic luminescence transistor 111 has asubstrate 112, on which an assistance electrode 113 and an insulationlayer 118 are layered. Then, an anode 115 is partially formed on theinsulation layer 118. Furthermore, a luminescent material layer 116 isformed on the insulation layer 118 such that the luminescent materiallayer 116 covers the anode 115. A cathode 117 is formed on theluminescent material layer 116. An anode buffer layer 119 is formed onthe anode 115. The anode buffer layer 119 has a function of allowingpassage of holes from the anode 115 to the luminescent material layer116 but blocking passage of electrons from the luminescent materiallayer 116 to the anode 115. In the organic luminescence transistor 111as well, a channel width is controlled by varying a voltage to beapplied between the assistance electrode 113 and the anode 115, and anamount of generated charge is varied by controlling a voltage to beapplied between the anode 115 and the cathode 117.

SUMMARY OF THE INVENTION

In the organic luminescence transistor composed of an SIT structure andan organic electroluminescence device structure, described in the abovedocument and the above patent publications, with reference to FIG. 19,when a certain voltage (−Vd1<0) is applied between the anode 115 and thecathode 117, many positive holes are generated on a surface of the anode115 opposite to the cathode 117, and the holes flow toward the cathode117 (a flow of electric charges is formed). Herein, when a voltageVd=−Vd2<<−Vd1 is applied between the anode 115 and the cathode 117 inorder to obtain a greater flow of electric charges (i.e., in order toobtain a greater luminance), generation of the electric charges betweenthe anode 115 and the cathode 117 and a flow thereof become dominant.Thus, the amount of the generated electric charges cannot be controlledby controlling the voltage (Vg) to be applied between the assistanceelectrode 113 and the anode 115, so that it is difficult to control theamount of the luminescence.

The present invention is accomplished in order to solve theaforementioned problems. An object of the present invention is toprovide a vertical type of organic luminescence transistor device and amanufacturing method thereof wherein a current control between an anodeand a cathode is facilitated.

The present invention is an organic luminescence transistor devicecomprising: a substrate; an assistance electrode layer provided on aside of an upper surface of the substrate; an insulation film providedon a side of an upper surface of the assistance electrode layer; a firstelectrode provided locally on a side of an upper surface of theinsulation film, the first electrode covering an area of a predeterminedsize; an electric-charge-injection inhibiting layer provided on an uppersurface of the first electrode, the electric-charge-injection inhibitinglayer having a shape larger than that of the first electrode in a planview; an electric-charge injection layer provided on the side of anupper surface of the insulation film at an area not provided with thefirst electrode or the electric-charge-injection inhibiting layer and onan upper surface of the electric-charge-injection inhibiting layer; aluminescent layer provided on an upper surface of the electric-chargeinjection layer; and a second electrode layer provided on a side of anupper surface of the luminescent layer.

Alternatively, the present invention is an organic luminescencetransistor device comprising: a substrate; an assistance electrode layerprovided on a side of an upper surface of the substrate; an insulationfilm provided on a side of an upper surface of the assistance electrodelayer; a first electrode provided locally on a side of an upper surfaceof the insulation film, the first electrode covering an area of apredetermined size; an electric-charge-injection inhibiting layerprovided on an upper surface of the first electrode, theelectric-charge-injection inhibiting layer having a shape larger thanthat of the first electrode in a plan view; an electric-charge injectionlayer provided on the side of an upper surface of the insulation film atan area not provided with the first electrode or theelectric-charge-injection inhibiting layer; a luminescent layer providedon an upper surface of the electric-charge-injection inhibiting layerand on an upper surface of the electric-charge injection layer; and asecond electrode layer provided on a side of an upper surface of theluminescent layer.

Alternatively, the present invention is an organic luminescencetransistor device comprising: a substrate; an assistance electrode layerprovided on a side of an upper surface of the substrate; an insulationfilm provided on a side of an upper surface of the assistance electrodelayer; a first electrode provided locally on a side of an upper surfaceof the insulation film, the first electrode covering an area of apredetermined size; an electric-charge injection layer provided on theside of an upper surface of the insulation film at an area not providedwith the first electrode; an electric-charge-injection inhibiting layerprovided on the whole upper surface of the first electrode and on apartial upper surface of the electric-charge injection layer, theelectric-charge-injection inhibiting layer having a shape larger thanthat of the first electrode in a plan view; a luminescent layer providedon the upper surface of the electric-charge injection layer at an areanot provided with the electric-charge-injection inhibiting layer; and asecond electrode layer provided on a side of an upper surface of theelectric-charge-injection inhibiting layer and on a side of an uppersurface of the luminescent layer.

According to the organic luminescence transistor device having any ofthe above structures, when a constant voltage is applied between thefirst electrode and the second electrode and a variable voltage isapplied between the assistance electrode and the first electrode, anamount of luminescence can be controlled.

According to the organic luminescence transistor device having any ofthe above structures, since there is provided on the first electrode theelectric-charge-injection inhibiting layer having a shape larger thanthat of the first electrode in a plan view, when a constant voltage isapplied between the first electrode and the second electrode, generationof electric charges (positive holes or electrons) on an upper surfaceand an upper peripheral edge (contour edge) of the first electrode isinhibited, and the flow of the electric charges toward the secondelectrode is inhibited. For example, the electric charges generated atthe first electrode are mainly generated at both edge surfaces (bothlateral surfaces), each of which has a small area, not provided with theelectric-charge-injection inhibiting layer. The thus generated electriccharges are efficiently injected into the electric-charge injectionlayer which is adjacent to the both edge surfaces, and then flow (move)toward the second electrode. Thus, under a condition wherein a constantvoltage is applied between the first electrode and the second electrode,a current value between the first electrode and the second electrode canbe inhibited. As a result, by controlling the voltage to be appliedbetween the assistance electrode and the first electrode, the electriccurrent flowing between the first electrode and the second electrode canbe controlled, so that the amount of the luminescence can be controlled.In particular, according to the present invention, since the shape ofthe electric-charge-injection inhibiting layer is greater than that ofthe first electrode (for example, an edge portion of the first electrodeis inside an edge portion of the electric-charge-injection inhibitinglayer), the voltage to be applied between the assistance electrode andthe first electrode may have less direct effect on the electric currentflowing between the first electrode and the second electrode.

In the above description, it is preferable that a thickness of theelectric-charge injection layer is greater than a thickness of the firstelectrode. In the case, at least an edge portion of the first electrodecomes in contact with the electric-charge injection layer, which ispreferable. Furthermore, in the case, one or more luminescent layers maybe formed between layered structures, each of which consists of thefirst electrode and the electric-charge-injection inhibiting layer, soas to form a matrix-patterned device. More specifically, it ispreferable that a thickness of the electric-charge injection layer issubstantially the same as or greater than a total thickness of the firstelectrode and the electric-charge-injection inhibiting layer.

In addition, it is preferable that the electric-charge injection layeris made of a coat-type electric-charge injection material. In the case,in a step of forming the electric-charge injection layer, the fluidcoat-type material can easily reach an edge portion of the firstelectrode located inside an edge portion of theelectric-charge-injection inhibiting layer. As a result, the electriccharges generated at the edge portion of the first electrode can beefficiently injected into the electric-charge injection layer which isin contact with the edge portion.

In addition, a second electric-charge injection layer made of the samematerial as or a different material from the electric-charge injectionlayer may be provided between the insulation film and the firstelectrode and the electric-charge injection layer. In the case, theelectric charges may be generated at a surface of the first electrode ona side of the insulation film as well. The flow of the electric chargesgenerated at the surface of the first electrode on a side of theinsulation film can be also controlled by the voltage to be appliedbetween the assistance electrode and the first electrode, so that theelectric current between the first electrode and the second electrodecan be controlled, that is, the amount of the luminescence can becontrolled.

In addition, it is preferable that a third electric-charge injectionlayer for the second electrode layer is provided between the luminescentlayer and the second electrode layer. In the case, according to the sameprinciple as the electric-charge injection layer provided adjacent tothe first electrode, injection of the electric charges into theluminescent layer can be facilitated because of the thirdelectric-charge injection layer provided adjacent to the secondelectrode.

Furthermore, in the case, it is preferable that an electric-chargetransfer layer is provided between the luminescent layer and the thirdelectric-charge injection layer, in order to improve performance of theelectric-charge transfer.

In addition, the electric-charge-injection inhibiting layer ispreferably made of an insulation material, more preferably a photoresistmaterial. In the case, a forming step of the electric-charge-injectioninhibiting layer on the first electrode is easy. In addition, accuracyof dimension in forming the electric-charge-injection inhibiting layercan be enhanced.

For example, the first electrode functions as an anode, and the secondelectrode functions as a cathode. Alternatively, the first electrodefunctions as a cathode, and the second electrode functions as an anode.Whichever polarity the first electrode and the second electrode have,the amount of the electric charges can be sensitively varied bycontrolling the voltage (gate voltage) to be applied between theassistance electrode and the first electrode. Thus, the electric currentbetween the first electrode and the second electrode is controlled, sothat the amount of the luminescence can be controlled sensitively.

In addition, the present invention is an organic luminescence transistorcomprising: an organic luminescence transistor device having any of theabove features; a first voltage-feeding unit configured to apply aconstant voltage between the first electrode and the second electrode ofthe organic luminescence transistor device; and a second voltage-feedingunit configured to apply a variable voltage between the first electrodeand the assistance electrode of the organic luminescence transistordevice.

According to the present invention, by means of the firstvoltage-feeding unit and the second voltage-feeding unit, a constantvoltage can be applied between the first electrode and the secondelectrode, and a variable voltage can be applied between the firstelectrode and the assistance electrode. As a result, the amount of theelectric charges can be sensitively varied, so that the electric currentbetween the first electrode and the second electrode is controlled andthe amount of the luminescence can be controlled sensitively.

In addition, the present invention is a luminescence display apparatuscomprising a plurality of luminescent parts arranged in a matrixpattern, wherein each of the plurality of luminescent parts has anorganic luminescence transistor device having any of the above features.

According to the luminescence display apparatus, the amount of theluminescence can be easily controlled, so that the luminance can beeasily adjusted.

In addition, the present invention is a manufacturing method of anorganic luminescence transistor device, the manufacturing methodcomprising the steps of: preparing a substrate on which an assistanceelectrode layer and an insulation film has been formed in this order;providing a first electrode locally on a side of an upper surface of theinsulation film such that the first electrode covers an area larger thana predetermined size in a plan view; providing anelectric-charge-injection inhibiting layer on an upper surface of thefirst electrode such that the electric-charge-injection inhibiting layerhas a shape larger than the predetermined size of the first electrode ina plan view; etching an edge portion of the first electrode until theedge portion of the first electrode is located inside an edge portion ofthe electric-charge-injection inhibiting layer such that the firstelectrode is made into the predetermined size; providing anelectric-charge injection layer by coating the upper surface of theinsulation film at an area not provided with the first electrode or theelectric-charge-injection inhibiting layer, with a coat-typeelectric-charge injection material, after the step of etching; providinganother electric-charge injection layer on an upper surface of theelectric-charge-injection inhibiting layer; providing a luminescentlayer on an upper surface of the electric-charge injection layer; andproviding a second electrode layer on a side of an upper surface of theluminescent layer.

Alternatively, the present invention is a manufacturing method of anorganic luminescence transistor device, the manufacturing methodcomprising the steps of: preparing a substrate on which an assistanceelectrode layer and an insulation film has been formed in this order;providing a first electrode locally on a side of an upper surface of theinsulation film such that the first electrode covers an area larger thana predetermined size in a plan view; providing anelectric-charge-injection inhibiting layer on an upper surface of thefirst electrode such that the electric-charge-injection inhibiting layerhas a shape larger than the predetermined size of the first electrode ina plan view; etching an edge portion of the first electrode until theedge portion of the first electrode is located inside an edge portion ofthe electric-charge-injection inhibiting layer such that the firstelectrode is made into the predetermined size; providing anelectric-charge injection layer by coating the upper surface of theinsulation film at an area not provided with the first electrode or theelectric-charge-injection inhibiting layer, with a coat-typeelectric-charge injection material, after the step of etching; providinga luminescent layer on an upper surface of the electric-charge-injectioninhibiting layer and on an upper surface of the electric-chargeinjection layer; and providing a second electrode layer on a side of anupper surface of the luminescent layer.

Alternatively, the present invention is a manufacturing method of anorganic luminescence transistor device, the manufacturing methodcomprising the steps of: preparing a substrate on which an assistanceelectrode layer and an insulation film has been formed in this order;providing a first electrode locally on a side of an upper surface of theinsulation film such that the first electrode covers an area larger thana predetermined size in a plan view; providing anelectric-charge-injection inhibiting layer on an upper surface of thefirst electrode such that the electric-charge-injection inhibiting layerhas a shape larger than the predetermined size of the first electrode ina plan view; etching an edge portion of the first electrode until theedge portion of the first electrode is located inside an edge portion ofthe electric-charge-injection inhibiting layer such that the firstelectrode is made into the predetermined size; providing anelectric-charge injection layer by coating the upper surface of theinsulation film at an area not provided with the first electrode, with acoat-type electric-charge injection material, after the step of etching;providing a luminescent layer on an upper surface of the electric-chargeinjection layer; and providing a second electrode layer on a side of anupper surface of the electric-charge-injection inhibiting layer and on aside of an upper surface of the luminescent layer.

Alternatively, the present invention is a manufacturing method of anorganic luminescence transistor device, the manufacturing methodcomprising the steps of: preparing a substrate on which an assistanceelectrode layer and an insulation film has been formed in this order;providing a first electrode locally on a side of an upper surface of theinsulation film such that the first electrode covers an area of apredetermined size; providing an electric-charge injection layer on theside of an upper surface of the insulation film at an area not providedwith the first electrode; providing an electric-charge-injectioninhibiting layer on the whole upper surface of the first electrode andon a partial upper surface of the electric-charge injection layer suchthat the electric-charge-injection inhibiting layer has a shape largerthan that of the first electrode in a plan view; providing anotherelectric-charge injection layer on the upper surface of theelectric-charge injection layer at an area not provided with theelectric-charge-injection inhibiting layer; providing anotherelectric-charge injection layer on an upper surface of theelectric-charge-injection inhibiting layer; providing a luminescentlayer on an upper surface of the electric-charge injection layer; andproviding a second electrode layer on a side of an upper surface of theluminescent layer.

Alternatively, the present invention is a manufacturing method of anorganic luminescence transistor device, the manufacturing methodcomprising the steps of: preparing a substrate on which an assistanceelectrode layer and an insulation film has been formed in this order;providing a first electrode locally on a side of an upper surface of theinsulation film such that the first electrode covers an area of apredetermined size; providing an electric-charge injection layer on theside of an upper surface of the insulation film at an area not providedwith the first electrode; providing an electric-charge-injectioninhibiting layer on the whole upper surface of the first electrode andon a partial upper surface of the electric-charge injection layer suchthat the electric-charge-injection inhibiting layer has a shape largerthan that of the first electrode in a plan view; providing anotherelectric-charge injection layer on the upper surface of theelectric-charge injection layer at an area not provided with theelectric-charge-injection inhibiting layer; providing anotherelectric-charge injection layer on an upper surface of theelectric-charge-injection inhibiting layer; providing a luminescentlayer on an upper surface of the electric-charge-injection inhibitinglayer and on an upper surface of the electric-charge injection layer;and providing a second electrode layer on a side of an upper surface ofthe luminescent layer.

Alternatively, the present invention is a manufacturing method of anorganic luminescence transistor device, the manufacturing methodcomprising the steps of: preparing a substrate on which an assistanceelectrode layer and an insulation film has been formed in this order;providing a first electrode locally on a side of an upper surface of theinsulation film such that the first electrode covers an area of apredetermined size; providing an electric-charge injection layer on theside of an upper surface of the insulation film at an area not providedwith the first electrode; providing an electric-charge-injectioninhibiting layer on the whole upper surface of the first electrode andon a partial upper surface of the electric-charge injection layer suchthat the electric-charge-injection inhibiting layer has a shape largerthan that of the first electrode in a plan view; providing a luminescentlayer on the upper surface of the electric-charge injection layer at anarea not provided with the electric-charge-injection inhibiting layer;and providing a second electrode layer on a side of an upper surface ofthe electric-charge-injection inhibiting layer and on a side of an uppersurface of the luminescent layer.

According to any of the above manufacturing methods of an organicluminescence transistor device, it is possible to efficientlymanufacture the organic luminescence transistor device.

Preferably, a step of providing a second electric-charge injection layermade of the same material as or a different material from theelectric-charge injection layer on the upper surface of the insulationfilm is conducted, before the step of providing the first electrode.

In addition, the present invention is an organic transistor devicecomprising: a substrate; an assistance electrode layer provided on aside of an upper surface of the substrate; an insulation film providedon a side of an upper surface of the assistance electrode layer; a firstelectrode provided locally on a side of an upper surface of theinsulation film, the first electrode covering an area of a predeterminedsize; an electric-charge-injection inhibiting layer provided on an uppersurface of the first electrode, the electric-charge-injection inhibitinglayer having a shape larger than that of the first electrode in a planview; an organic semiconductor layer provided on the side of an uppersurface of the insulation film at an area not provided with the firstelectrode and the electric-charge-injection inhibiting layer; and asecond electrode layer provided on a side of an upper surface of theorganic semiconductor layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic sectional view showing an organic luminescencetransistor device according to an embodiment of the present invention;

FIG. 2 is an explanatory view conceptually showing flows of electriccharges in the organic luminescence transistor device of FIG. 1;

FIGS. 3A to 3C are respectively schematic sectional views showingorganic luminescence transistor devices according to other embodimentsof the present invention;

FIG. 4 is a schematic sectional view showing an organic luminescencetransistor device according to another embodiment of the presentinvention;

FIG. 5 is a schematic sectional view showing an organic luminescencetransistor device according to another embodiment of the presentinvention;

FIG. 6 is a schematic sectional view showing an organic luminescencetransistor device according to another embodiment of the presentinvention;

FIG. 7 is a schematic sectional view showing an organic luminescencetransistor device according to another embodiment of the presentinvention;

FIG. 8 is a schematic sectional view showing an organic transistordevice according to an embodiment of the present invention;

FIGS. 9A to 9F are flow charts showing a manufacturing method of anorganic luminescence transistor device according to an embodiment of thepresent invention;

FIGS. 10A to 10F are flow charts showing a manufacturing method of anorganic luminescence transistor device according to another embodimentof the present invention;

FIG. 11 is a plan view showing an example of electrode arrangement thatforms an organic luminescence transistor device according to anembodiment of the present invention;

FIG. 12 is a plan view showing another example of electrode arrangementthat forms an organic luminescence transistor device according to anembodiment of the present invention;

FIG. 13 is a schematic view showing an example of luminescentdisplay-apparatus in which an organic luminescence transistor deviceaccording to an embodiment of the present invention is embedded;

FIG. 14 is a schematic circuit diagram showing an example of organicluminescence transistor, including an organic luminescence transistordevice according to an embodiment of the present invention provided foreach pixel (unit device) in a luminescent display apparatus;

FIG. 15 is a schematic circuit diagram showing another example oforganic luminescence transistor, including an organic luminescencetransistor device according to an embodiment of the present inventionprovided for each pixel (unit device) in a luminescent displayapparatus;

FIG. 16 is a schematic sectional view of an organic luminescencetransistor device of an example 1;

FIG. 17 is a schematic sectional view of an organic luminescencetransistor device of an example 2;

FIG. 18 is a schematic sectional view showing an example of conventionalorganic luminescence transistor composed of an SIT structure and anorganic EL (electroluminescence) device structure; and

FIG. 19 is a schematic sectional view showing another example ofconventional organic luminescence transistor composed of an SITstructure and an organic EL (electroluminescence) device structure.

BEST MODE FOR CARRYING OUT THE INVENTION

The preset invention is explained in detail based on embodimentsthereof. FIGS. 1 to 7 show respective embodiments of an organicluminescence transistor device according to the present invention. Theorganic luminescence transistor device of the present invention is afield effect type of organic luminescence transistor device having anorganic EL device structure and a vertical FET structure.

The embodiment shown in FIG. 1 comprises, at least, a substrate 1, anassistance electrode layer 2 provided on an upper surface of thesubstrate 1, an insulation film 3 provided on an upper surface of theassistance electrode layer 2, a first electrode 4 provided locally on anupper surface of the insulation film 3 so as to cover an area of apredetermined size, an electric-charge-injection inhibiting layer 5provided on an upper surface of the first electrode 4 such that theelectric-charge-injection inhibiting layer 5 has a shape larger thanthat of the first electrode 4 in a plan view, an electric-chargeinjection layer 12 provided both on the upper surface of the insulationfilm 3 at an area not provided with the first electrode 4 and on anupper surface of the electric-charge-injection inhibiting layer 5, aluminescent layer 11 provided on an upper surface of the electric-chargeinjection layer 12, and a second electrode 7 provided on an uppersurface of the luminescent layer 11.

Herein, in the present specification, the electric-charge injectionlayer 12 and the luminescent layer 11 may be integrally called anorganic layer 6. If required, an electric-charge transfer layer(described below) may be included in the organic layer 6.

In the embodiment of FIG. 1, the electric-charge injection layer 12 andan edge portion (end surface) 4 a of the first electrode 4 are incontact with each other. At the edge portion 4 a of the first electrode4, electric charges (positive holes or electrons) are generated by agate voltage VG applied between the first electrode 4 and the assistanceelectrode 2. The electric charges are carried from the first electrode 4toward the second electrode 7 by a drain voltage VD applied between thefirst electrode 4 and the second electrode 7.

In the present embodiment (although the other embodiments are also thesame), by applying a constant electric field (drain voltage VD) betweenthe first electrode 4 and the second electrode 7 and by varying anelectric field (gate voltage VG) applied between the assistanceelectrode 2 and the first electrode 4, a generation amount of theelectric charges can be controlled. The generated electric charges arecarried to the luminescent layer 11, and reunite with electric chargessupplied from the second electrode 7 so as to be made luminescent (toemit light). Thus, when the generation amount of the electric charges iscontrolled, an amount of the luminescence is controlled.

This control for the amount of the luminescence can be achieved by thefact that the electric-charge-injection inhibiting layer 5 is providedon the first electrode 4. As shown in FIG. 2, when a constant voltage(drain voltage VD) is applied between the first electrode 4 and thesecond electrode 7, a flow toward the second electrode 7 of the electriccharges, which are generated on the upper surface of the first electrode4, is inhibited by the existence of the electric-charge-injectioninhibiting layer 5. Only electric charges generated at an edge portion(end surface) 4 a, which has only a small area and is not covered by theelectric-charge-injection inhibiting layer 5, flow toward the secondelectrode 7. Thus, under such a situation that the constant voltage(drain voltage VD) is applied between the first electrode 4 and thesecond electrode 7, the electric current between the first electrode andthe second electrode is inhibited. As a result, by controlling thevoltage (gate voltage VG) applied between the assistance electrode 2 andthe first electrode 4, generation of the electric charges is assisted,so that the amount of the generated electric charges can be controlledand thus the amount of the luminescence can be controlled.

As a feature of the present invention, as shown in FIGS. 1 to 8, theelectric-charge-injection inhibiting layer 5 is provided on the firstelectrode 4 such that the electric-charge-injection inhibiting layer 5has a shape larger than that of the first electrode 4 in a plan view.Thus, at least partially, the edge portion 4 a of the first electrode 4is located inside an edge portion of the electric-charge-injectioninhibiting layer 5. Under such a situation, when a constant voltage isapplied between the first electrode 4 and the second electrode 7,generation of the electric charges (positive holes or electrons) on anupper surface and a contour edge of the first electrode 4 can beinhibited. As a result, compared with a case wherein the first electrode4 and the electric-charge-injection inhibiting layer 5 are formed in thesame size (in a plan view), direct effect of the voltage applied betweenthe assistance electrode 2 and the first electrode 4 can be made less.

With reference to FIG. 1, when the width of theelectric-charge-injection inhibiting layer 5 is represented by d1; thewidth of the first electrode 4 is represented by d2, and gaps(non-overlapped width) between the edge portion of theelectric-charge-injection inhibiting layer 5 and the edge portion 4 a ofthe first electrode 4 are represented by d3 and d4, it is preferablethat d2<d1 and that the edge portion 4 a of the first electrode 4 islocated inside the edge portion of the electric-charge-injectioninhibiting layer 5. The position of the edge portion(s) 4 a of the firstelectrode 4 is determined by the gaps (de, d4) relative to the edgeportion(s) of the electric-charge-injection inhibiting layer 5. When thegaps (d3, d4) are very small, that is, when the first electrode 4 andthe electric-charge-injection inhibiting layer 5 have substantially thesame size in a plan view, generation of the electric charges (positiveholes or electrons) may be caused at the contour edge(s) of the edgeportion(s) 4 a of the first electrode 4. In that case, the thusgenerated electric charges tend to be affected by the voltage appliedbetween the assistance electrode 2 and the first electrode 4. Therefore,control characteristics of the electric current between the first-secondelectrodes may be deteriorated to some extent. On the other hand, thegaps (d3, d4) may be considerably large as far as it is not difficult toform such shapes.

The forms of the first electrode 4 and the electric-charge-injectioninhibiting layer 5 may be as shown in FIGS. 6 and 7. In the embodimentsshown in FIGS. 6 and 7, differently from the embodiment shown in FIG. 1,one edge portion 4 a of the first electrode 4 is located inside one edgeportion of the electric-charge-injection inhibiting layer 5 on the sideof the electric-charge injection layer 12 provided between neighborfirst electrodes. Regarding the other edge portion of the firstelectrode 4 on the opposite side, in the embodiment as shown in FIG. 6,the electric-charge-injection inhibiting layer 5 covers the firstelectrode 4, and in the embodiment as shown in FIG. 7, the firstelectrode 4 is extended to an upper surface of the insulation film 3(see an upper end portion or a lower end portion of a comb-shapedelectrode shown in FIGS. 11 and 12, for example). Compared therewith, inthe embodiment as shown in FIG. 1, both the right and left edge portions4 a of the first electrode 4 are located inside the respective edgeportions of the electric-charge-injection inhibiting layer 5. In theembodiment of the FIG. 1, both the right and left edge portions 4 a arein contact with the electric-charge injection layer 12 (see a centralportion of the comb-shaped electrode shown in FIGS. 11 and 12, forexample).

Regarding polarity of the electrodes, the first electrode 4 may bestructured as an anode, and the second electrode 7 may be structured asa cathode. Alternatively, the first electrode 4 may be structured as acathode, and the second electrode 7 may be structured as an anode.Whichever polarity the first electrode 4 and the second electrode 7 haverespectively, the amount of the electric charges can be sensitivelyvaried by controlling the voltage applied between the assistanceelectrode 2 and the first electrode 4. Thus, the electric currentbetween the first and second electrodes can be controlled, so that theamount of the luminescence can be controlled.

Herein, when the first electrode 4 is an anode and the second electrode7 is a cathode, the electric-charge injection layer adjacent to thefirst electrode 4 is a positive-hole injection layer. Then, if anotherelectric-charge injection layer 14 (third electric-charge injectionlayer) adjacent to the second electrode 7 is provided (see FIG. 6), theelectric-charge injection layer 14 is an electron injection layer. Onthe other hand, when the first electrode 4 is a cathode and the secondelectrode 7 is an anode, the electric-charge injection layer adjacent tothe first electrode 4 is an electron injection layer. Then, if anotherelectric-charge injection layer 14 adjacent to the second electrode 7 isprovided (see FIG. 6), the electric-charge injection layer 14 is apositive-hole injection layer.

The important features are that the first electrode 4 is formed on aside of the upper surface of the insulation film 3 (a secondelectric-charge injection layer may be provided therebetween: see FIG.5), and that the electric-charge-injection inhibiting layer 5 is formedon the first electrode 4 to have a shape larger than that of the firstelectrode 4 in a plan view (such that the electric-charge-injectioninhibiting layer 5 covers over (at least a part of) the contour edge ofthe first electrode 4), and that the edge portion 4 a of the firstelectrode 4 is arranged in contact with (adjacent to) theelectron-charge injection layer 12. The other features may be variouslymodified. For example, respective embodiments as shown in FIGS. 3A to 7may be adopted.

For example, regarding the structural form of the organic layer 6 havingthe electric-charge injection layer 12 and the luminescent layer 11; (i)as shown in FIG. 1, the electric-charge injection layer 12 may be formedto have a thickness T3 not less than the thickness T1 of the firstelectrode 4 and also not less than the total thickness T2 of the firstelectrode 4 and the electric-charge-injection inhibiting layer 5; (ii)as shown in FIG. 3A, the electric-charge injection layer 12 may beformed to have substantially the same thickness as the thickness T1 ofthe first electrode 4; and (iii) as shown in FIG. 3B, theelectric-charge injection layer 12 may be formed to have thesubstantially the same thickness as the total thickness T2 of the firstelectrode 4 and the electric-charge-injection inhibiting layer 5. In anyof the above embodiments, the edge portion 4 a of the first electrode 4can be come in contact with the electric-charge injection layer 12.

In addition, for example, as shown in FIG. 3C, the electric-chargeinjection layer 12 may be formed to have substantially the samethickness as the thickness T1 of the first electrode 4, and theluminescent layer 11 may be formed on the electric-charge injectionlayer 12 to have substantially the same thickness as the thickness ofthe electric-charge-injection inhibiting layer 5. (As shown in FIG. 3C,the maximum thickness of the luminescent layer can be substantially thesame thickness as the thickness of the electric-charge-injectioninhibiting layer 5. The thickness of the luminescent layer may bethinner than the thickness of the electric-charge-injection inhibitinglayer 5.) In the organic luminescent transistor device 20C according tothe embodiment of FIG. 3C as well, the edge portion 4 a of the firstelectrode can be come in contact with the electric-charge injectionlayer 12. In addition, in the organic luminescent transistor device 20Caccording to the embodiment of FIG. 3C, the luminescent layer 11 isformed between layered structural bodies 8, each of which consists ofthe first electrode 4 and the electric-charge-injection inhibiting layer5, so that an matrix-patterned device can be achieved.

Regarding the layered form of the organic layer 6, for example; as shownin FIGS. 1 to 3C, a two-layer structure wherein the electric-chargeinjection layer 12 and the luminescent layer 11 are formed on theinsulation film 3 in this order may be given as an example; as shown inFIGS. 4 and 5, a three-layer structure wherein the secondelectric-charge injection layer 12′ and the electric-charge injectionlayer 12 and the luminescent layer 11 are formed on the insulation film3 in this order may be given as an example; as shown in FIG. 6, athree-layer structure wherein the electric-charge injection layer 12 andthe luminescent layer 11 and the electric-charge injection layer 14 areformed ion the insulation film 3 in this order may be given as anexample; as shown in FIG. 7, a three-layer structure wherein theelectric-charge injection layer 12 and the electric-charge transferlayer 13 and the luminescent layer 11 are formed in this order from theside of the insulation film 3 may be given as an example. The structureof the organic layer 6 is not limited thereto. If required, anelectric-charge transfer layer or the like may be provided. In addition,an electric-charge injection layer material and/or an electric-chargetransfer layer material may be included in the luminescent layer 11, sothat the single layer of the luminescent layer 11 can have functions ofthe electric-charge injection layer and/or the electric-charge transferlayer.

As described above, in the respective embodiments shown in FIGS. 4 and5, the electric-charge injection layer 12′ and the electric-chargeinjection layer 12 and the luminescent layer 11 are formed on theinsulation film 3 in this order. That is, in the organic luminescencetransistor devices 30, 40 according to these embodiments, theelectric-charge injection layer 12′ made of a material the same as ordifferent from that of the electric-charge injection layer 12 isprovided between the insulation film 3 and the first electrode 4 and theelectric-charge injection layer 12 shown in FIGS. 1 to 3. In the organicluminescence transistor devices 30, 40, since the electric-chargeinjection layer 12″ is further provided, electric charges may begenerated at a surface of the first electrode 4 on the side of theinsulation film 3 as well. The generated electric charges are controlledby the voltage applied between the assistance electrode 2 and the firstelectrode 4. Thus, the electric current between the first and secondelectrodes is controlled, so that the amount of the luminescence can becontrolled.

The organic luminescence transistor devices of the respectiveembodiments may be top-emission type of luminescence (Light-Emitting)transistor devices or bottom-emission type of luminescence transistordevices. Light transmittance of each layer is designed depending onwhich type is adopted. Each sectional view of the organic luminescencetransistor device corresponds to one pixel of an organic luminescencetransistor. Thus, if a luminescent layer is formed to emit apredetermined color light for each pixel, a color display or the likemay be formed as a luminescent display apparatus.

In addition, as shown in FIG. 8, the features of the present inventionmay be used for an organic transistor device. In the organic transistordevice 70 of FIG. 8, the electric-charge-injection inhibiting layer 5 isformed on the first electrode 4 opposite to the second electrode 7, theelectric-charge-injection inhibiting layer 5 being larger than the firstelectrode 4 in a plan view. Thus, the amount of the electric chargesflowing toward an organic semiconductor layer 15 (for example, anelectric-charge injection layer or an electric-charge transfer layer)can be inhibited (controlled). (Control characteristics of the organictransistor device are improved by the inhibition of the direct flow ofthe electric charges from the upper surface of the first electrode 4 tothe second electrode 7).

<Structure of the Organic Luminescence Transistor Device>

Layers and electrodes included in the organic luminescence transistordevices of the respective embodiments are explained below.

The substrate 1 is not particularly limited, but may be suitablyselected depending on materials or the like of layers to be laminated.For example, it may be selected from various materials such as metal,for example aluminum, glass, quartz, or resin. In the case of an organicluminescence transistor device having a bottom-emission structure, whichemits light from a side of the substrate, it is preferable that thesubstrate is formed of a transparent or semitransparent material. On theother hand, in the case of an organic luminescence transistor devicehaving a top-emission structure, which emits light from a side of thesecond electrode 7, it is not necessary to use a transparent orsemitransparent material. That is, the substrate 1 may be formed of anopaque material.

More preferably, it is possible to use various materials that have beengenerally used as a substrate of an organic EL device. For example,depending on the application, flexible materials or rigid materials orthe other may be selected. Specifically, there can be used substratesmade from such materials as glass, quartz (silica), polyethylene,polypropylene, polyethylene terephthalate, polymethacrylate, polymethylmethacrylate, polymethyl acrylate, polyester, and polycarbonate.

The substrate 1 may have an individual shape or a continuous shape (afilm or a SUS roll (thin SUS roll)). Specifically, a card-patternedshape, a film-like shape, a disk-like shape, and so on may be given asan example.

As electrodes, there are provided the assistance electrode 2, the firstelectrode 4 and the second electrode 7. As materials for the respectiveelectrodes, a metal, a conductive oxide, a conductive polymer or thelike may be used.

The first electrode 4 is locally provided on the side of the uppersurface of the insulation film 3 in a predetermined size. Thepredetermined size is not particularly limited. As an example, there isprovided a comb-shaped electrode 4 having a line-width of about 1 to 500μm and a line-pitch of about 1 to 500 μm, (which is shown as a layeredstructure 8 in FIG. 11), which is described below with reference to FIG.11. Alternatively, there may be provided a lattice-shaped electrode 4having a lattice-width of about 1 to 500 μm and a lattice-pitch of about1 to 500 μm, (which is shown as layered structures 8 i in theX-direction and layered structures 8 y in the Y-direction in FIG. 12),which is described below with reference to FIG. 12. The shape of thefirst electrode 4 is not limited to the comb-like shape or thelattice-like shape, but may be various shapes such as a rhombus or acircle. The line-width and the line-pitch thereof are also not limitedparticularly. In addition, the line-width and/or the line-pitch may benot uniform.

Examples of materials useful for forming the assistance electrode 2include electrically-conductive transparent films such as films of ITO(indium tin oxide), indium oxide, IZO (indium zinc oxide), SnO2, andZnO; metallic materials having great work functions, such as gold andchromium; general metallic materials, such as silver and aluminum; andelectrically-conductive polymers such as polyaniline, polyacetylene,polyalkylthiophene derivatives, and polysilane derivatives. Theassistance electrode 2 is provided on the side of the upper surface ofthe substrate 1. A barrier layer and/or a smoothing layer may beprovided between the substrate 1 and the assistance layer 2.

Examples of materials useful for forming the first electrode 4 or thesecond electrode 7 as a cathode include single metallic materials suchas aluminum and silver; magnesium alloy, such as MgAg; aluminum alloy,such as AlLi, AlCa, and AlMg; alkali metallic materials, such as Li andCa; alkali metallic alloy, such as LiF; and other metallic materialshaving small work functions.

On the other hand, examples of materials useful for forming the firstelectrode 4 or the second electrode 7 as an anode include, among theelectrode-forming materials useful for the auxiliary electrode 2 and forthe above-described cathode, metals that produce “ohmic contact” withsome material of the organic layer (the charge injection layer or theluminescent layer) in contact with the anode. Preferred examples of suchmaterials include metallic materials having great work functions, suchas gold and chromium; electrically-conductive transparent films such asfilms of ITO (indium tin oxide), indium oxide, IZO (indium zinc oxide),SnO2, and ZnO; and electrically-conductive polymers such as polyaniline,polyacetylene, polyalkylthiophene derivatives, and polysilanederivatives. Each of the assistance electrode 2, the first electrode 4and the second electrode 7 may be a single-layered electrode made of anyof the above materials, or a multi-layered electrode made of a pluralityof the above materials. The thickness of each electrode is not limited,but usually within a range of 10 to 1000 nm.

When the organic luminescence transistor device is a bottom-emissiontype, it is preferable that the electrodes located below the luminescentlayer 11 are transparent or semitransparent. On the other hand, when theorganic luminescence transistor device is a top-emission type, it ispreferable that the electrodes located above the luminescent layer 11are transparent or semitransparent. As a transparent electrode material,any of the above electrically-conductive transparent films, thinmetallic films, and electrically-conductive polymer films may be used.Herein, the “below” and the “above” are defined in a vertical directionin the plane of the drawings.

The above respective electrodes are formed by a vacuum process such asvacuum deposition, sputtering or CVD, or a coating process. Thethickness (film thickness) of each electrode depends on the materialused for the electrode. For example, it is preferable that the thicknessis within a range of about 10 nm to about 1000 nm. Herein, when anelectrode is formed on the organic layer such as the luminescent layer11 and/or the electric-charge injection layer 12, a protecting layer(not shown) may be provided on the organic layer, in order to reducedamage of the organic layer at the formation of the electrode. Theprotection layer may be provided before the electrode is formed, in acase wherein the electrode is formed on the organic layer by asputtering method or the like. For example, a vacuum deposition film ora sputtering film is preferably formed by a semitransparent film made ofAu, Ag, Al, or the like, or by an inorganic semiconductor film made ofZnS, ZnSe, or the like, which scarcely gives damage to the organic layerwhen the film is formed. The thickness of the protection layer ispreferably within a range of about 1 to about 500 nm.

The insulating layer 3 is formed on the assistance (auxiliary) electrode2. The insulating layer 3 can be formed from an inorganic material suchas SiO2, SiNx or Al2O3, an organic material such as polychloroprene,polyethylene terephthalate, polyoxymethylene, polyvinyl chloride,polyvinylidene fluoride, cyanoethyl pullulan, polymethyl methacrylate,polyvinyl phenol, polysulfone, polycarbonate or polyimide, or acommercially available resist material that is commonly used in thisfield. The insulation film 3 may be a single-layered insulation filmmade of any of the above materials, or a multi-layered insulation filmmade of a plurality of the above materials.

In particular, in the present invention, in view of manufacturing costand/or manufacturing easiness, it is preferable to use a resist materialcommonly used in this field. A predetermined pattern may be formed by ascreen printing method, a spin coating method, a cast method, aCzochralski method, a decalcomania method, an ink-jetting method, aphotolithography method, or the like. The insulation film 3 made of theabove inorganic material may be formed by an existing patterning processsuch as a CVD. It is preferable that the thickness of the insulationfilm 3 is thinner. However, if the thickness is too thin, leakageelectric current between the assistance electrode 2 and the firstelectrode 4 tends to become great. Thus, the thickness is usually withina range of about 0.001 μm to 5.0 μm.

When the organic luminescent transistor device is the bottom-emissiontype, the insulation film 3 is located below the luminescent layer 11.Thus, the insulation film 3 is preferably transparent orsemitransparent. On the other hand, when the organic luminescenttransistor device is the top-emission type, it is unnecessary that theinsulation film 3 is transparent or semitransparent.

The electric-charge-injection inhibiting layer 5 is provided on thefirst electrode 4, in an area larger than the first electrode 4 (in ashape larger than the first electrode 4 in a plan view), and functionsto inhibit the flow of the electric charges (positive holes orelectrons) generated at the upper surface of the first electrode 4,which is opposite to the second electrode 7, toward the second electrode7. In the present invention, the shape of the electric-charge-injectioninhibiting layer 5 is larger than the upper surface of the firstelectrode 4, which is opposite to the second electrode 7. Thus, theelectric charges (flow of the electric charges) are mainly generated atthe edge portion 4 a, which has only a small area and is not covered bythe electric-charge-injection inhibiting layer 5. The amount of thegenerated electric charges (flow of the electric charges) at the edgeportion 4 a of the first electrode 4 is controlled by the gate voltageVG applied between the assistance electrode 2 and the first electrode 4.In addition, the electric charges (flow of the electric charges)generated at the edge portion 4 a moves toward the second electrode 7 bymeans of the drain voltage VD applied between the first electrode 4 andthe second electrode 7. Thus, by controlling the gate voltage VG appliedbetween the assistance electrode 2 and the first electrode 4, theelectric current flowing between the first electrode 4 and the secondelectrode 7 may be controlled. Thus, the luminescence amount may becontrolled. The electric-charge-injection inhibiting (suppression) layer5 can be formed from any of a variety of materials, as long as it canexhibit the above-described effects. Examples of films useful for theelectric-charge-injection inhibiting (suppression) layer 5 includeinorganic or organic insulating films. For example, theelectric-charge-injection inhibiting (suppression) layer 5 may be a filmof an inorganic insulating material such as SiO2, SiNx or Al2O3, or of aconventional organic insulating material such as polychloroprene,polyethylene terephthalate, polyoxymethylene, polyvinyl chloride,polyvinylidene fluoride, cyanoethyl pullulan, polymethyl methacrylate,polyvinyl phenol, polysulfone, polycarbonate or polyimide. Theelectric-charge-injection inhibiting (suppression) layer 5 may be asingle-layered electric-charge-injection inhibiting layer made of any ofthe above materials, or a multi-layered electric-charge-injectioninhibiting layer made of a plurality of the above materials. Theelectric-charge-injection inhibiting layer 5 is formed by a vacuumprocess such as vacuum deposition, sputtering or CVD, or a coatingprocess. The thickness of the electric-charge-injection inhibiting layer5 depends on the material used for the electric-charge-injectioninhibiting layer 5. For example, it is preferable that the thickness iswithin a range of about 0.001 μm to about 10 μm.

It is preferable that the electric-charge-injection inhibiting layer 5is made of an insulation material which is easily available, easilyformable, and easily capable of precisely patterning. In particular, itis preferable to use a resist material. The resist film may be apositive type or a negative type. When a resist film is used as amaterial for the electric-charge-injection inhibiting layer 5, theelectric-charge-injection inhibiting layer 5 can be precisely formed ina predetermined size (thickness and shape (area)), which isadvantageous.

The electric-charge-injection inhibiting layer 5 is formed, at leastpartially, on the upper surface of the first electrode 4, which isopposite to the second electrode 7, in a shape larger than the firstelectrode 4. Herein, the edge portion 4 a of the first electrode 4 isarranged in contact with the electric-charge injection layer 12. Sincethe above electric-charge-injection inhibiting layer 5 is formed, theelectric charges (flow of the electric charges) are not generated at theupper surface of the first electrode 4, which is opposite to the secondelectrode 7. However, the electric charges (flow of the electriccharges) are generated at the edge portion 4 a of the small area. As aresult, by controlling the voltage (gate voltage) applied between theassistance electrode 2 and the first electrode 4, the amount of thegenerated electric charges (generated positive holes) is sensitivelychanged. This, the electric current between the first and secondelectrodes can be controlled, so that the amount of the luminescence canbe controlled.

As described above, the organic layer 6 includes, at least, theelectric-charge injection layer 12 and the luminescent layer 11. Ifrequired, an electric-charge transfer layer or the like may be added.Alternatively, the organic layer 6 may include a luminescent layer 11including an electric-charge injecting material. As long as theserequirements are satisfied, the organic layer 6 is not particularlylimited. That is, the above respective manners may be adopted. Eachlayer as a component of the organic layer 6 is formed in a suitablethickness (for example, within a range of 0.1 nm to 1 μm), depending ona structure of the device and/or a kind of the material. Herein, if thethickness of each layer of the organic layer is too large, a largevoltage may be necessary in order to obtain a predetermined lightemission, which is inferior in light-emission efficiency. On the otherhand, if the thickness of each layer of the organic layer is too small,a pinhole or the like may be generated, which results in insufficientluminance (brightness) when the electric field is applied.

Any material that is commonly used as a luminescent layer in an organicEL device is useful for the luminescent layer 11. For example, a pigmentluminescent material, a metal complex luminescent material, a polymerluminescent material, or the like may be used.

Examples of luminescent pigments include cyclopentadiene derivatives,tetraphenyl butadiene derivatives, triphenylamine derivatives,oxadiazole derivatives, pyrazoloquinoline derivatives, distyrylbenzenederivatives, distyrylarylene derivatives, silol derivatives, thiophenecyclic compounds, pyridine cyclic compounds, perinone derivatives,perylene derivatives, oligothiophene derivatives, trifumanylaminederivatives, oxadiazole dimers, and pyrazoline dimers. Examples ofluminescent metal complexes include alumiquinolinol complexes,benzoquinolinol beryllium complexes, benzoxazole zinc complexes,benzothiazole zinc complexes, azomethyl zinc complexes, porphyrin zinccomplexes, and europium complexes. Other examples of luminescent metalcomplexes include metal complexes having, as a central metal, such ametal as Al, Zn or Be, or a rare earth metal such as Tb, Eu or Dy, and,as a ligand, oxadiazole, thiadiazole, phenylpyridine,phenylbenzimidazole, or quinoline structure. Examples of luminescentpolymers include polyparaphenylene vinylene derivatives, polythiophenederivatives, polyparaphenylene derivatives, polysilane derivatives,polyacetylene derivatives, polyvinyl carbazole, polyfluorenonederivatives, polyfluorene derivatives and polyquinoxaline derivatives,and copolymers of these derivatives.

Additives such as a dopant may be added to the luminescent layer 11 forthe purpose of improving light emission efficiency or of changingemission wavelength. Examples of dopants useful herein include perylenederivatives, coumarin derivatives, rubrene derivatives, quinacridonederivatives, squaleum derivatives, porphyrin derivatives, styryl dyes,tetracene derivatives, pyrazoline derivatives, decacyclene, phenoxazine,quinoxaline derivatives, carbazole derivatives, and fluorenederivatives.

Examples of materials useful for forming the electric-charge injectionlayer 12 include the compounds enumerated above as examples ofluminescent materials. Other materials useful for the electric-chargeinjection layer 12 include phenylamines, starburst amines,phthalocyanines, polyacenes, oxides such as vanadium oxide, molybdenumoxide, ruthenium oxide and aluminum oxide, and derivatives of amorphouscarbon, polyaniline, polythiophene, etc.

In particular, it is preferable that the material used for theelectric-charge injection layer 12 is a fluid coat-type material. As thefluid coat-type material, any coat-type material may be used, forexample a polymer material, a low-molecular material, a dendrimer or thelike. It is preferable that the material can easily reach the edgeportion 4 a of the first electrode 4 located inside an edge portion ofthe electric-charge-injection inhibiting layer 5 when theelectric-charge injection layer 12 is formed. (As a result, the electriccharges generated at the edge portion 4 a of the first electrode 4 canbe efficiently injected into the electric-charge injection layer 12which is in contact with the edge portion 4 a.)

An electric-charge injection layer 14 for the second electrode (see FIG.6) may be formed on the luminescent layer 11 side of the secondelectrode 7. Examples of materials that can be used to form theelectric-charge (electron) injection layer 14 when the second electrode7 serves as a cathode include the compounds described above as examplesof luminescent materials for the luminescent layer 11, as well asalkaline metals, halides of alkaline metals, organic complexes havingalkaline metals, and so on, such as aluminum, lithium fluoride,strontium, magnesium oxide, magnesium fluoride, strontium fluoride,calcium fluoride, barium fluoride, aluminum oxide, strontium oxide,calcium, polymethyl methacrylate polystyrene sodium sulfonate, lithium,cesium, and cesium fluoride.

Examples of materials that can be used to form the electric-charge(hole) transfer layer 13 (see FIG. 7) when the first electrode 4 servesas an anode include those materials that are commonly used aspositive-hole transfer materials, such as phthalocyanine,naphthalocyanine, porphyrin, oxadiazole, triphenylamine, triazole,imidazole, imidazolone, pyrazoline, tetrahydroimidazole, hydrazone,stilbene, pentacene, polythiophene and butadiene, and derivatives ofthese compounds. It is also possible to usepoly(3,4)ethylenedioxythiophene/polystyrene sulfonate (abbreviation:PEDOT/PSS, manufactured by BAYER AG., trade name: Baytron P AI4083, soldas an aqueous solution) and the like, commercially available asmaterials useful for forming the electric-charge transfer layer 13. Anelectric-charge-transfer-layer-forming coating liquid containing any ofthe above-enumerated compounds is used to form the electric-chargetransfer layer 13. The electric-charge transfer material may beincorporated into the luminescent layer 11 or into the electric-chargeinjection layer 12.

Further, although not shown in the figures, an electric-charge transferlayer may be formed on the second electrode 7 side of the luminescentlayer 11. Examples of materials that can be used to form thiselectric-charge (electron) transfer layer when the second electrode 7serves as a cathode include those materials that are commonly used aselectron transfer materials, such as anthraquinodimethane,fluorenylidene methane, tetracyanoethylene, fluorenone, diphenoquinoneoxadiazole, anthrone, thiopyrane dioxide, diphenoquinone, benzoquinone,malononitrile, dinitrobenzene, nitroanthraquinone, maleic anhydride, andperylene tetracarboxylic acid, and derivatives of these compounds. Anelectric-charge-transfer-layer-forming coating liquid containing any ofthe above-enumerated compounds is used to form the electric-charge(electron) transfer layer. The electric-charge transfer material may beincorporated into the luminescent layer 11 or into the charge injectionlayer 12.

A luminescent material or electric-charge transfer/injection material,such as an oligomeric or dendrimeric material, can be incorporated inthe organic layer composed of the luminescent layer 11, the chargeinjection layer 12, the electric-charge transfer layer 13, etc., asneeded. To form each layer constituting the organic layer, a vacuumdeposition process is used. Alternatively, a coating liquid prepared bydissolving or dispersing the material for forming each layer in such asolvent as toluene, chloroform, dichloromethane, tetrahydrofuran, ordioxane is applied with an applicator or the like, or is printed, toform each layer.

As described above, the organic layer 6 is formed by theluminescent-layer forming material, the electric-charge-injection-layerforming material, electric-charge-transfer-layer forming material,and/or the like, depending on the respective layered (laminated)manners. Herein, the organic layer 6 is divided by partitions (notshown), and formed at each predetermined position. The partitions (notshown) form areas divided for respective emission colors in the plane ofthe organic luminescent transistor. As a material for the partitions,any conventional material that is commonly used as a partition materialmay be used, for example a photosensitive resin, an active energy beamcurable resin, a heat curable resin, a thermoplastic resin or the like.As a forming method of the partitions, a suitable method for the adoptedpartition material is adopted. For example, a thick-film printing methodor a patterning method to a photosensitive resin may be used to form thepartitions.

In the embodiment shown in FIG. 3C, the electric-charge-injectioninhibiting layer 5 is thickened to come in contact with the secondelectrode 7. In the case, the laminated structure consisting of thefirst electrode 4 and the electric-charge injection inhibiting layer 5serves as the partition. In the other embodiments, regarding thelaminated structure consisting of the first electrode 4 and theelectric-charge injection inhibiting layer 5, the thickness of theelectric-charge injection inhibiting layer 5 is formed to be thin, forexample as shown in FIG. 3A. Thus, light emitting parts are formed byproviding respective color organic EL luminescent layers for the areassurrounded (divided) by the partitions (not shown). In addition, thestructure shown in FIG. 3A may be arranged inside an area surrounded bythe structure shown in FIG. 3C. In the case, the layered structure 8′ ofFIG. 3C serves as the partitions, and light emitting parts are formed byproviding respective color organic EL luminescent layers for the areassurrounded (divided) by the other partitions (not shown).

<Manufacturing Method of the Organic Luminescence Transistor Device>

Next, embodiments of a manufacturing method of an organic luminescencetransistor device according to the present invention are explained.FIGS. 9A to 9F are flow charts showing a manufacturing method of anorganic luminescence transistor device according to an embodiment of thepresent invention;

The manufacturing method of an organic luminescence transistor deviceaccording to the present embodiment comprises, at least, the steps of:preparing a substrate 1 on which an assistance electrode layer 2 and aninsulation film 3 has been formed in this order (see FIG. 9A); providinga first electrode 4′ locally on the insulation film 3 such that thefirst electrode 4′ covers an area larger than a predetermined size in aplan view (see FIG. 9B); providing an electric-charge-injectioninhibiting layer 5 on the first electrode 4′ such that theelectric-charge-injection inhibiting layer 5 has another predeterminedsize (a shape larger than the predetermined size of the first electrode4 in a plan view) (see FIGS. 9C and 9D); etching an edge portion of thefirst electrode 4′ until the edge portion 4 a of the first electrode 4is located inside an edge portion of the electric-charge-injectioninhibiting layer 5 such that the first electrode 4 is made into thepredetermined size (see FIG. 9E); providing an electric-charge injectionlayer 12 by coating the upper surface of the insulation film 3 at anarea not provided with the first electrode 4 or theelectric-charge-injection inhibiting layer 5, with a coat-typeelectric-charge injection material and providing another electric-chargeinjection layer 12 on the electric-charge-injection inhibiting layer 5(see FIG. 9F); providing a luminescent layer 11 on the electric-chargeinjection layer 12 (see FIG. 9F); and providing a second electrode layer7 on the luminescent layer 11 (see FIG. 9F).

According to the manufacturing method of the present embodiment, thearrangement of the edge portion 4 a of the first electrode 4 inside theedge portion of the electric-charge-injection inhibiting layer 5 isachieved by overetching the laminar first electrode 4′ after theelectric-charge-injection inhibiting layer 5 of the predetermine sizehas been formed. Then, the coat-type electric-charge injection materialis applied on the insulation film 3 at an area not provided with thefirst electrode 4, so that the electric-charge injection layer 12 isformed. According to the manufacturing method of the present embodiment,the arrangement of the edge portion 4 a of the first electrode 4 insidethe edge portion of the electric-charge-injection inhibiting layer 5(one type of arrangement wherein the electric-charge-injectioninhibiting layer 5 is provided on the first electrode 4 in a shapelarger than the first electrode 4 in a plan view) can be easilyachieved. In particular, it should be noted that the fluid coat-typeelectric-charge injection material can be easily filled in a space onthe insulation film 3 inside the edge portion of theelectric-charge-injection inhibiting layer 5.

The coat-type electric-charge injection material can be applied by acoating method such as an ink-jetting method. Thus, compared with avapor deposition process conducted for a conventional low-molecularelectric-charge injection material, the electric-charge injection layer12 is formed easily and at less cost. In addition, the overetchingprocess of the laminar first electrode 4′ may be conducted with anetching liquid or an etching gas corresponding to the material of thefirst electrode 4.

Among the above steps, in the step of forming theelectric-charge-injection inhibiting layer 5 on the first electrode 4′shown in FIG. 9B, as a material for the electric-charge-injectioninhibiting layer 5, the various materials as described above may bepreferably used. For example, as a material for theelectric-charge-injection inhibiting layer 5, a photosensitive resistmay be used. In the case, by means of usual exposure, development, andthe like, the electric-charge-injection inhibiting layer 5 having thepredetermined size can be formed easily and precisely.

FIGS. 9A to 9F correspond to a manufacturing method of an organicluminescence transistor device 10 shown in FIG. 1. However, the organicluminescence transistor devices shown in FIGS. 3A to 3C may bemanufactured in the same manner.

When the organic luminescence transistor device 20A shown in FIG. 3A ismanufactured, the electric-charge injection layer 12 is formed in such amanner that the thickness T3 of the electric-charge injection layer 12is not less than the thickness T1 of the first electrode 4 andsubstantially the same as the thickness T1 of the first electrode 4.Thereafter, the luminescent layer 11 is formed to uniformly cover theupper surface of the electric-charge injection layer 12 and the uppersurface of the electric-charge-injection inhibiting layer 5.

When the organic luminescence transistor device 20B shown in FIG. 3B ismanufactured, the electric-charge injection layer 12 is formed in such amanner that the thickness T3 of the electric-charge injection layer 12is substantially the same as the total thickness T2 of the firstelectrode 4 and the electric-charge-injection inhibiting layer 5.Thereafter, the luminescent layer 11 is formed to uniformly cover theupper surface of the electric-charge injection layer 12 and the uppersurface of the electric-charge-injection inhibiting layer 5.

When the organic luminescence transistor device 20C shown in FIG. 3C ismanufactured, the electric-charge injection layer 12 is formed in such amanner that the thickness T3 of the electric-charge injection layer 12is substantially the same as the thickness T1 of the first electrode 4.Thereafter, the luminescent layer 11 is formed in such a manner that thetotal thickness of the electric-charge injection layer 12 and theluminescent layer 11 doesn't exceed but becomes substantially the sameas the total thickness of the first electrode 4 and theelectric-charge-injection inhibiting layer 5.

In the manufacturing method for the organic luminescent transistordevices shown in FIGS. 3A to 3C, both the electric-charge injectionmaterial and the luminescent-layer forming material may be formed by acoating method such as an ink-jetting method, which is preferable inview of productivity. By means of such a method, the electric-chargeinjection layer 12 may be formed between adjacent first electrodes 4, 4,to form a device. In addition, as shown in FIG. 3C, luminescent layers11 may be formed between adjacent layered structures, each of whichconsists of the first electrode 4 and the electric-charge-injectioninhibiting layer 5, to form a matrix-patterned device.

FIGS. 10A to 10F are flow charts showing an example of a manufacturingmethod of an organic luminescence transistor device shown in FIG. 4. Asshown in FIGS. 10A to 10F, the present manufacturing method, at least,comprises the steps of: preparing a substrate 1 on which an assistanceelectrode layer 2 and an insulation film 3 has been formed in this order(see FIG. 10A); providing a electric-charge-injection layer 12′ on theinsulation film 3 (see FIG. 10B); providing a first electrode 4 locallyon the electric-charge-injection layer 12′ on the side of the uppersurface of the insulation film 3 such that the first electrode 4 coversan area of a predetermined size (see FIG. 10B); providing anelectric-charge injection layer 12 on the insulation film 3 at an areanot provided with the first electrode 4 (see FIG. 10C); providing anelectric-charge-injection inhibiting layer 5 on the whole upper surfaceof the first electrode 4 and on end portions of the upper surface of theelectric-charge injection layer 12 such that theelectric-charge-injection inhibiting layer 5 has a shape larger thanthat of the first electrode 4 in a plan view (see FIGS. 10D and 10E);providing another electric-charge injection layer 12″ on theelectric-charge injection layer 12 at an area not provided with theelectric-charge-injection inhibiting layer 5 and also on theelectric-charge-injection inhibiting layer 5 (see FIG. 10F); providing aluminescent layer 11 on the electric-charge injection layer 12″; andproviding a second electrode layer 7 on the luminescent layer 11.

The electric-charge injection layer 12′ provided on the insulation film3 may be made of the same material as the electric-charge injectionlayer 12 or made of another material different from the electric-chargeinjection layer 12. The electric-charge injection layer 12″ may be alsomade of the same material as the electric-charge injection layer 12 ormade of another material different from the electric-charge injectionlayer 12. The single electric-charge injection layer is usually made ofone single material, but may be made of a lamination of a plurality ofmaterials.

According to the manufacturing method shown in FIGS. 10A to 10F, thearrangement of the edge portion 4 a of the first electrode 4 inside theedge portion of the electric-charge-injection inhibiting layer 5 isachieved by providing an electric-charge injection layer 12 between thefirst electrodes 4 formed into the predetermined size, and by providingan electric-charge-injection inhibiting layer 5 on the first electrode 4and on the end portions of the electric-charge injection layer 12 suchthat the electric-charge-injection inhibiting layer 5 has a shape largerthan that of the first electrode 4 in a plan view. Herein, in themanufacturing method shown in FIGS. 10A to 10F as well, it is preferablethat the electric-charge injection material is a fluid coat-typematerial.

Organic luminescent transistor devices shown in FIGS. 5 to 7 and anorganic transistor device shown in FIG. 8 may be also manufacturedthrough substantially the same steps as the above steps.

<Organic Luminescence Transistor and Luminescence Display Apparatus>

Next, embodiments of an organic luminescence transistor and aluminescence display apparatus are explained. The present invention isnot limited by the following explanation.

In the organic luminescence transistor of the present embodiment, aplurality of organic luminescence transistor devices is arranged in amatrix pattern on a sheet-like substrate. The organic luminescencetransistor of the present embodiment comprises: the plurality of organicluminescence transistor devices, a first voltage-feeding unit configuredto apply a constant voltage (drain voltage VD) between the firstelectrode 4 and the second electrode 7 of each organic luminescencetransistor device, and a second voltage-feeding unit configured to applya variable voltage (gate voltage VG) between the first electrode 4 andthe assistance electrode 2 of each organic luminescence transistordevice.

FIGS. 11 and 12 are plan view showing examples of electrode arrangementof the organic luminescence transistor device included in the organicluminescence transistor of the present embodiment. FIG. 11 is anarrangement view wherein the layered structure 8, which consists of thefirst electrode 4 and the electric-charge-injection inhibiting layer 5,is formed in a comb-like shape. FIG. 12 is an arrangement view whereinthe layered structure is formed in a lattice-like shape. The electrodearrangement shown in FIG. 11 includes an assistance electrode 2extending in a vertical direction in a plan view; the layered structure8 (first electrode 4) having a comb-like shape extending transversallyfrom one lateral side perpendicularly to the assistance electrode 2; anda second electrode 7 extending transversally from the other lateral sideperpendicularly to the assistance electrode 2 and overlappedly with thelayered structure 8. In the electrode arrangement shown in FIG. 12,instead of the layered structure 8 of the comb-like shape shown in FIG.11, layered structures 8 x extending in an X-direction and layeredstructures 8 y extending in a Y-direction are provided, which forms alattice pattern. Herein, the arrangements shown in FIGS. 11 and 12 aremere examples.

In the luminescence display apparatus of the present embodiment, aplurality of luminescent parts is arranged in a matrix pattern. Each ofthe plurality of luminescent parts has an organic luminescencetransistor device having the feature of the present invention.

FIG. 13 is a schematic view showing an example of luminescent displayapparatus in which an organic luminescence transistor device accordingto an embodiment of the present invention is embedded. FIG. 14 is aschematic circuit diagram showing an example of organic luminescencetransistor, including an organic luminescence transistor deviceaccording to an embodiment of the present invention provided for eachpixel (unit device) in a luminescent display apparatus. The luminescentdisplay apparatus explained here is an example wherein each pixel (unitdevice) 180 has one switching transistor.

Each pixel 180 shown in FIGS. 13 and 14 is connected to a firstswitching wire 187 and a second switching wire 188, which are arrangedcrisscross. As shown in FIG. 13, the first switching wire 187 and thesecond switching wire 188 are connected to a voltage control circuit164. The voltage control circuit 164 is connected to an image-signalfeeding source 163. In addition, in FIGS. 13 and 14, the referencenumeral 186 represents a ground wire, and the reference numeral 189represents a constant-voltage applying wire.

As shown in FIG. 14, the source 193 a of a first switching transistor183 is connected to the second switching wire 188, the gate 194 a of thefirst switching transistor 183 is connected to the first switching wire187, and the drain 195 a of the first switching transistor 183 isconnected to the assistance electrode 2 of the organic luminescencetransistor 140 and one terminal of a capacitor 185 for maintaining avoltage. The other terminal of the capacitor 185 for maintaining avoltage is connected to the ground 186. The second electrode 7 of theorganic luminescence transistor 140 is also connected to the ground 186.The first electrode 4 of the organic luminescence transistor 140 isconnected to the constant-voltage applying wire 189.

Next, an operation of the circuit shown in FIG. 14 is explained. When avoltage is applied to the first switching wire 187, the voltage isapplied to the gate 194 a of the first switching transistor 183. Thus,the source 193 and the drain 195 a are electrically connected. Under thesituation, when a voltage is applied to the second switching wire 188,the voltage is applied to the drain 195 a, so that electric charges arestored in the capacitor 185 for maintaining a voltage. Thus, even whenthe voltage applied to the first switching wire 187 or the secondswitching wire 188 is turned off, a certain voltage continues to beapplied to the assistance electrode 2 of the organic luminescencetransistor 140 until the electric charges stored in the capacitor 185disappear. On the other hand, when a voltage is applied to the firstelectrode 4 of the organic luminescence transistor 140, the firstelectrode 4 and the second electrode 7 are electrically connected, sothat an electric current flows from the constant-voltage feeding wire189 to the ground 186 through the organic luminescence transistor 140.Thus, the organic luminescence transistor 140 becomes luminescent (emitslight).

FIG. 15 is a schematic circuit diagram showing another example oforganic luminescence transistor, including an organic luminescencetransistor device according to an embodiment of the present inventionprovided for each pixel (unit device) in a luminescent displayapparatus. The luminescent display apparatus explained here is anexample wherein each pixel (unit device) 181 has two switchingtransistors.

In the same manner as the case shown in FIG. 14, each pixel 181 shown inFIG. 15 is connected to a first switching wire 187 and a secondswitching wire 188, which are arranged crisscross. As shown in FIG. 13,the first switching wire 187 and the second switching wire 188 areconnected to a voltage control circuit 164. The voltage control circuit164 is connected to an image-signal feeding source 163. In addition, inFIG. 15, the reference numeral 186 represents a ground wire, thereference numeral 209 represents an electric-current feeding wire, andthe reference numeral 189 represents a constant-voltage applying wire.

As shown in FIG. 15, the source 193 a of a first switching transistor183 is connected to the second switching wire 188, the gate 194 a of thefirst switching transistor 183 is connected to the first switching wire187, and the drain 195 a of the first switching transistor 183 isconnected to the gate 194 b of a second switching transistor 184 and oneterminal of a capacitor 185 for maintaining a voltage. The otherterminal of the capacitor 185 for maintaining a voltage is connected tothe ground 186. The source 193 b of the second switching transistor 184is connected to the electric-current source 209, and the drain 195 b ofthe second switching transistor 184 is connected to the assistanceelectrode 2 of the organic luminescence transistor 140. The secondelectrode 7 of the organic luminescence transistor 140 is connected tothe ground 186. The first electrode 4 of the organic luminescencetransistor 140 is connected to the constant-voltage applying wire 189.

Next, an operation of the circuit shown in FIG. 15 is explained. When avoltage is applied to the first switching wire 187, the voltage isapplied to the gate 194 a of the first switching transistor 183. Thus,the source 193 and the drain 195 a are electrically connected. Under thesituation, when a voltage is applied to the second switching wire 188,the voltage is applied to the drain 195 a, so that electric charges arestored in the capacitor 185 for maintaining a voltage. Thus, even whenthe voltage applied to the first switching wire 187 or the secondswitching wire 188 is turned off, a certain voltage continues to beapplied to the gate 194 b of the second switching transistor 184 untilthe electric charges stored in the capacitor 185 disappear. Since thevoltage is applied to the gate 194 b of the second transistor 184, thesource 193 b and the drain 195 b are electrically connected. Thus, anelectric current flows from the constant-voltage feeding wire 189 to theground 186 through the organic luminescence transistor 140. Thus, theorganic luminescence transistor 140 becomes luminescent (emits light).

The image-signal feeding source 163 shown in FIG. 13 includes or isconnected to a playback apparatus for the image information or anapparatus of converting inputted electro-magnetic information into anelectric signal. The playback apparatus for the image informationincludes or is connected to an image-information media in which imageinformation is recorded. The image-signal feeding source 163 isconfigured to convert an electrical signal, which has been sent from theplayback apparatus for the image information or from the apparatus ofconverting inputted electromagnetic information into an electric signal,into an electric signal manner that is receivable by the voltage controlapparatus 164. The voltage control apparatus 164 further converts theelectric signal from the image-signal feeding source 163, calculateswhich pixel 180, 181 should become luminescent and how long the pixelshould become luminescent, and then determines the voltage applied tothe first switching wire 187 and the second switching wire 188, the timeperiod of application of the voltage and the timing thereof. Thus, theluminescent display apparatus can display a desired image based on theimage information.

A color-image display apparatus can be obtained when adjacent smallpixels respectively emit RGB three colors, that is, a red-based color, agreen-based color and a blue-based color.

EXAMPLES

Examples are explained below.

Example 1

An insulation film 3 was formed of a PVP-based resist (manufactured byTOKYO OHKA KOGYO CO. Ltd., trade name: TMR-P10), into a 300 nmthickness, by means of a spin coating method, on a glass substrate 1having an assistance electrode 2 that is made of an ITO film and has a100 nm thickness.

Next, by means of a vacuum deposition method, a first electrode 4(anode) was uniformly formed of Au (whose thickness was 30 nm). Then,the same PVP-based resist (manufactured by TOKYO OHKA KOGYO CO., Ltd.,trade name: TMR-P10) was coated with (applied) by the spin coatingmethod. Through exposure and development with a mask, an electric-charge(positive hole) injection inhibiting layer 5 having a width d1 of 50 μmand a thickness of 100 nm was formed. Then, an Au etching liquid(manufactured by KANTO CHEMICAL CO., INC., trade name: AURUM 101) wasused as an etching liquid, so that the first electrode 4 was over-etchedsuch that the edge portion 4 a of the first electrode 4 is locatedinside the edge portion of the electric-charge-injection inhibitinglayer 5. Then, the width d2 of the first electrode 4 was 44 μm, d3 andd4 shown in FIG. 2 were 3 μm.

Thereafter, a poly(3-hexylthiophene) (manufactured by ALDRICH Corp.,trade name: Poly(3-hexylthiophene-2,5-diyl)), which is anelectric-charge injection material, was coated with (applied) on theinsulation film 3 at an area not provided with the first electrode 4, byan ink-jetting method. Thus, an electric-charge injection layer 12having a thickness of 150 nm, which is not less than the total thicknessof the first electrode 4 and the electric-charge injection inhibitinglayer 5, was formed.

Then, α-NPD (40 nm in thickness) was deposited as an electric-charge(positive hole) transfer layer 13, by means of a vacuum depositionmethod, so as to cover the electric-charge injection layer 12 and theelectric-charge-injection inhibiting layer 5. Furthermore, Alq3 (60 nmin thickness) as a luminescent layer 11/Lif (1 nm in thickness) as anelectron injection layer 14/Al (100 nm in thickness) as a secondelectrode 7 were layered (laminated) in this order by means of a vacuumdeposition method. Thus, an organic luminescent transistor device of theexample 1 as shown in FIG. 16 was manufactured.

Example 2

Before the laminar first electrode 4 is uniformly formed on theinsulation film 3, pentacene (50 nm in thickness) was deposited as theelectron-charge (positive hole) injection layer 12′, by means of avacuum deposition method. Except this matter, in the same manner as theexample 1, an organic luminescent transistor device of the example 2 asshown in FIG. 17 was manufactured.

Example 3

An insulation film 3 was formed of a PVP-based resist (manufactured byTOKYO OHKA KOGYO CO. Ltd., trade name: TMR-P10), into a 300 nmthickness, by means of a spin coating method, on a glass substrate 1having an assistance electrode 2 that is made of an ITO film and has a100 nm thickness.

Next, by means of a vacuum deposition method with a mask, a firstelectrode 4 (anode) having a width d1=100 μm was formed of Au (whosethickness was 30 nm). Then, a poly(3-hexylthiophene) (manufactured byALDRICH Corp., trade name: Poly(3-hexylthiophene-2,5-diyl)), which is anelectric-charge injection polymer material, was coated with (applied) onthe insulation film 3 at an area not provided with the first electrode4. Thus, an electric-charge injection layer 12 having a thickness of 30nm, which is the same as the first electrode 4, was formed. Then, on thefirst electrode 4 and the electric-charge injection layer 12, the samePVP-based resist (manufactured by TOKYO OHKA KOGYO CO. Ltd., trade name:TMR-P10) was deposited by a spin coating method. Then, through exposureand development with a mask, an electric-charge (positive hole)injection inhibiting layer 5 having a width d1 of 120 μm and a thicknessof 50 nm was formed. At that time, d3 and d4 shown in FIG. 2 were 10 μm.Thereafter, the same electric-charge injection polymer material wasapplied more, so that the thickness of the electric-charge injectionlayer 12 was increased to 100 nm.

Then, α-NPD (40 nm in thickness) was deposited as an electric-charge(positive hole) transfer layer 13, by means of a vacuum depositionmethod, so as to cover the electric-charge injection layer 12 and theelectric-charge-injection inhibiting layer 5. Furthermore, Alq3 (60 nmin thickness) as a luminescent layer 11/Lif (1 nm in thickness) as anelectron injection layer 14/Al (100 nm in thickness) as a secondelectrode 7 were layered (laminated) in this order by means of a vacuumdeposition method. Thus, an organic luminescent transistor device of theexample 3 was manufactured. The sectional structure of the example 3 issimilar to the sectional structure of the example 1 shown in FIG. 16.

Example 4

Before the laminar first electrode 4 is uniformly formed on theinsulation film 3, pentacene (50 nm in thickness) was deposited as theelectron-charge (positive hole) injection layer 12′, by means of avacuum deposition method. Except this matter, in the same manner as theexample 3, an organic luminescent transistor device of the example 4 wasmanufactured. The sectional structure of the example 4 is similar to thesectional structure of the example 2 shown in FIG. 17.

Example 5

An insulation film 3 was formed of a PVP-based resist (manufactured byTOKYO OHKA KOGYO CO. Ltd., trade name: TMR-P10), into a 300 nmthickness, by means of a spin coating method, on a glass substrate 1having an assistance electrode 2 that is made of an ITO film and has a100 nm thickness.

Next, by means of a vacuum deposition method, a first electrode 4(anode) was uniformly formed of Au (whose thickness was 30 nm). Then,the same PVP-based resist (manufactured by TOKYO OHKA KOGYO CO., Ltd.,trade name: TMR-P10) was coated with (applied) by the spin coatingmethod. Through exposure and development with a mask, an electric-charge(positive hole) injection inhibiting layer 5 having a width d1 of 50 μmand a thickness of 100 nm was formed. Then, an Au etching liquid(manufactured by KANTO CHEMICAL CO., INC., trade name: AURUM 101) wasused as an etching liquid, so that the first electrode 4 was over-etchedsuch that the edge portion 4 a of the first electrode 4 is locatedinside the edge portion of the electric-charge-injection inhibitinglayer 5. Then, the width d2 of the first electrode 4 was 44 μm, d3 andd4 shown in FIG. 2 were 3 μm.

Thereafter, a poly(3-hexylthiophene) (manufactured by ALDRICH Corp.,trade name: Poly(3-hexylthiophene-2,5-diyl)), which is an organicsemiconductor material, was coated with (applied) on the insulation film3 at an area not provided with the first electrode 4. Thus, an organicsemiconductor layer 15 having a thickness of 150 nm, which is not lessthan the total thickness of the first electrode 4 and theelectric-charge injection inhibiting layer 5, was formed.

Then, Al (70 nm in thickness) was deposited as a second electrode 7 bymeans of a vacuum deposition method, so that an organic transistordevice of the example 5 was manufactured. The sectional structure of theexample 5 is similar to the sectional structure shown in FIG. 8.

1. An organic luminescence transistor device comprising a substrate, anassistance electrode layer provided on a side of an upper surface of thesubstrate, an insulation film provided on a side of an upper surface ofthe assistance electrode layer, a first electrode provided locally on aside of an upper surface of the insulation film, the first electrodecovering an area of a predetermined size, an electric-charge-injectioninhibiting layer provided on an upper surface of the first electrode,the electric-charge-injection inhibiting layer having a shape largerthan that of the first electrode in a plan view, an electric-chargeinjection layer provided on the side of an upper surface of theinsulation film at an area not provided with the first electrode or theelectric-charge-injection inhibiting layer and on an upper surface ofthe electric-charge-injection inhibiting layer, a luminescent layerprovided on an upper surface of the electric-charge injection layer, anda second electrode layer provided on a side of an upper surface of theluminescent layer.
 2. An organic luminescence transistor devicecomprising a substrate, an assistance electrode layer provided on a sideof an upper surface of the substrate, an insulation film provided on aside of an upper surface of the assistance electrode layer, a firstelectrode provided locally on a side of an upper surface of theinsulation film, the first electrode covering an area of a predeterminedsize, an electric-charge-injection inhibiting layer provided on an uppersurface of the first electrode, the electric-charge-injection inhibitinglayer having a shape larger than that of the first electrode in a planview, an electric-charge injection layer provided on the side of anupper surface of the insulation film at an area not provided with thefirst electrode or the electric-charge-injection inhibiting layer, aluminescent layer provided on an upper surface of theelectric-charge-injection inhibiting layer and on an upper surface ofthe electric-charge injection layer, and a second electrode layerprovided on a side of an upper surface of the luminescent layer.
 3. Anorganic luminescence transistor device comprising a substrate, anassistance electrode layer provided on a side of an upper surface of thesubstrate, an insulation film provided on a side of an upper surface ofthe assistance electrode layer, a first electrode provided locally on aside of an upper surface of the insulation film, the first electrodecovering an area of a predetermined size, an electric-charge injectionlayer provided on the side of an upper surface of the insulation film atan area not provided with the first electrode, anelectric-charge-injection inhibiting layer provided on the whole uppersurface of the first electrode and on a partial upper surface of theelectric-charge injection layer, the electric-charge-injectioninhibiting layer having a shape larger than that of the first electrodein a plan view, a luminescent layer provided on the upper surface of theelectric-charge injection layer at an area not provided with theelectric-charge-injection inhibiting layer, and a second electrode layerprovided on a side of an upper surface of the electric-charge-injectioninhibiting layer and on a side of an upper surface of the luminescentlayer.
 4. An organic luminescence transistor device according to claim1, wherein a thickness of the electric-charge injection layer is greaterthan a thickness of the first electrode.
 5. An organic luminescencetransistor device according to claim 1, wherein the electric-chargeinjection layer is made of a coat-type electric-charge injectionmaterial.
 6. An organic luminescence transistor device according toclaim 1, wherein a second electric-charge injection layer made of thesame material as or a different material from the electric-chargeinjection material is provided between the insulation film and the firstelectrode and the electric-charge injection material.
 7. An organicluminescence transistor device according to claim 1, wherein a thirdelectric-charge injection layer for the second electrode layer isprovided between the luminescent layer and the second electrode layer.8. An organic luminescence transistor device according to claim 1,wherein an electric-charge transfer layer is provided between theluminescent layer and the third electric-charge injection layer.
 9. Anorganic luminescence transistor device according to claim 1, wherein theelectric-charge-injection inhibiting layer is made of an insulationmaterial.
 10. An organic luminescence transistor device according toclaim 1, wherein the first electrode functions as an anode, and thesecond electrode functions as a cathode.
 11. An organic luminescencetransistor device according to claim 1, wherein the first electrodefunctions as a cathode, and the second electrode functions as an anode.12. An organic luminescence transistor comprising an organicluminescence transistor device according to claim 1, a firstvoltage-feeding unit configured to apply a constant voltage between thefirst electrode and the second electrode of the organic luminescencetransistor device, and a second voltage-feeding unit configured to applya variable voltage between the first electrode and the assistanceelectrode of the organic luminescence transistor device.
 13. Aluminescence display apparatus comprising a plurality of luminescentparts arranged in a matrix pattern, wherein each of the plurality ofluminescent parts has an organic luminescence transistor deviceaccording to claim
 1. 14. A manufacturing method of an organicluminescence transistor device, the manufacturing method being formanufacturing an organic luminescence transistor device according toclaim 1, the manufacturing method comprising the steps of: preparing asubstrate on which an assistance electrode layer and an insulation filmhas been formed in this order, providing a first electrode locally on aside of an upper surface of the insulation film such that the firstelectrode covers an area larger than a predetermined size in a planview, providing an electric-charge-injection inhibiting layer on anupper surface of the first electrode such that theelectric-charge-injection inhibiting layer has a shape larger than thepredetermined size of the first electrode in a plan view, etching anedge portion of the first electrode until the edge portion of the firstelectrode is located inside an edge portion of theelectric-charge-injection inhibiting layer such that the first electrodeis made into the predetermined size, providing an electric-chargeinjection layer by coating the upper surface of the insulation film atan area not provided with the first electrode or theelectric-charge-injection inhibiting layer, with a coat-typeelectric-charge injection material, after the step of etching, providinganother electric-charge injection layer on an upper surface of theelectric-charge-injection inhibiting layer, providing a luminescentlayer on an upper surface of the electric-charge injection layer, andproviding a second electrode layer on a side of an upper surface of theluminescent layer.
 15. A manufacturing method of an organic luminescencetransistor device, the manufacturing method being for manufacturing anorganic luminescence transistor device according to claim 2, themanufacturing method comprising the steps of: preparing a substrate onwhich an assistance electrode layer and an insulation film has beenformed in this order, providing a first electrode locally on a side ofan upper surface of the insulation film such that the first electrodecovers an area larger than a predetermined size in a plan view,providing an electric-charge-injection inhibiting layer on an uppersurface of the first electrode such that the electric-charge-injectioninhibiting layer has a shape larger than the predetermined size of thefirst electrode in a plan view, etching an edge portion of the firstelectrode until the edge portion of the first electrode is locatedinside an edge portion of the electric-charge-injection inhibiting layersuch that the first electrode is made into the predetermined size,providing an electric-charge injection layer by coating the uppersurface of the insulation film at an area not provided with the firstelectrode or the electric-charge-injection inhibiting layer, with acoat-type electric-charge injection material, after the step of etching,providing a luminescent layer on an upper surface of theelectric-charge-injection inhibiting layer and on an upper surface ofthe electric-charge injection layer, and providing a second electrodelayer on a side of an upper surface of the luminescent layer.
 16. Amanufacturing method of an organic luminescence transistor device, themanufacturing method being for manufacturing an organic luminescencetransistor device according to claim 3, the manufacturing methodcomprising the steps of: preparing a substrate on which an assistanceelectrode layer and an insulation film has been formed in this order,providing a first electrode locally on a side of an upper surface of theinsulation film such that the first electrode covers an area larger thana predetermined size in a plan view, providing anelectric-charge-injection inhibiting layer on an upper surface of thefirst electrode such that the electric-charge-injection inhibiting layerhas a shape larger than the predetermined size of the first electrode ina plan view, etching an edge portion of the first electrode until theedge portion of the first electrode is located inside an edge portion ofthe electric-charge-injection inhibiting layer such that the firstelectrode is made into the predetermined size, providing anelectric-charge injection layer by coating the upper surface of theinsulation film at an area not provided with the first electrode, with acoat-type electric-charge injection material, after the step of etching,providing a luminescent layer on an upper surface of the electric-chargeinjection layer, and providing a second electrode layer on a side of anupper surface of the electric-charge-injection inhibiting layer and on aside of an upper surface of the luminescent layer.
 17. A manufacturingmethod of an organic luminescence transistor device, the manufacturingmethod being for manufacturing an organic luminescence transistor deviceaccording to claim 1, the manufacturing method comprising the steps of:preparing a substrate on which an assistance electrode layer and aninsulation film has been formed in this order, providing a firstelectrode locally on a side of an upper surface of the insulation filmsuch that the first electrode covers an area of a predetermined size,providing an electric-charge injection layer on the side of an uppersurface of the insulation film at an area not provided with the firstelectrode, providing an electric-charge-injection inhibiting layer onthe whole upper surface of the first electrode and on a partial uppersurface of the electric-charge injection layer such that theelectric-charge-injection inhibiting layer has a shape larger than thatof the first electrode in a plan view, providing another electric-chargeinjection layer on the upper surface of the electric-charge injectionlayer at an area not provided with the electric-charge-injectioninhibiting layer, providing another electric-charge injection layer onan upper surface of the electric-charge-injection inhibiting layer,providing a luminescent layer on an upper surface of the electric-chargeinjection layer, and providing a second electrode layer on a side of anupper surface of the luminescent layer.
 18. A manufacturing method of anorganic luminescence transistor device, the manufacturing method beingfor manufacturing an organic luminescence transistor device according toclaim 2, the manufacturing method comprising the steps of: preparing asubstrate on which an assistance electrode layer and an insulation filmhas been formed in this order, providing a first electrode locally on aside of an upper surface of the insulation film such that the firstelectrode covers an area of a predetermined size, providing anelectric-charge injection layer on the side of an upper surface of theinsulation film at an area not provided with the first electrode,providing an electric-charge-injection inhibiting layer on the wholeupper surface of the first electrode and on a partial upper surface ofthe electric-charge injection layer such that theelectric-charge-injection inhibiting layer has a shape larger than thatof the first electrode in a plan view, providing another electric-chargeinjection layer on the upper surface of the electric-charge injectionlayer at an area not provided with the electric-charge-injectioninhibiting layer, providing another electric-charge injection layer onan upper surface of the electric-charge-injection inhibiting layer,providing a luminescent layer on an upper surface of theelectric-charge-injection inhibiting layer and on an upper surface ofthe electric-charge injection layer, and providing a second electrodelayer on a side of an upper surface of the luminescent layer.
 19. Amanufacturing method of an organic luminescence transistor device, themanufacturing method being for manufacturing an organic luminescencetransistor device according to claim 3, the manufacturing methodcomprising the steps of: preparing a substrate on which an assistanceelectrode layer and an insulation film has been formed in this order,providing a first electrode locally on a side of an upper surface of theinsulation film such that the first electrode covers an area of apredetermined size, providing an electric-charge injection layer on theside of an upper surface of the insulation film at an area not providedwith the first electrode, providing an electric-charge-injectioninhibiting layer on the whole upper surface of the first electrode andon a partial upper surface of the electric-charge injection layer suchthat the electric-charge-injection inhibiting layer has a shape largerthan that of the first electrode in a plan view, providing a luminescentlayer on the upper surface of the electric-charge injection layer at anarea not provided with the electric-charge-injection inhibiting layer,and providing a second electrode layer on a side of an upper surface ofthe electric-charge-injection inhibiting layer and on a side of an uppersurface of the luminescent layer.
 20. A manufacturing method of anorganic luminescence transistor device according to claim 14, wherein astep of providing a second electric-charge injection layer made of thesame material as or a different material from the electric-chargeinjection layer on the upper surface of the insulation film isconducted, before the step of providing the first electrode.
 21. Anorganic transistor device comprising a substrate, an assistanceelectrode layer provided on a side of an upper surface of the substrate,an insulation film provided on a side of an upper surface of theassistance electrode layer, a first electrode provided locally on a sideof an upper surface of the insulation film, the first electrode coveringan area of a predetermined size, an electric-charge-injection inhibitinglayer provided on an upper surface of the first electrode, theelectric-charge-injection inhibiting layer having a shape larger thanthat of the first electrode in a plan view, an organic semiconductorlayer provided on the side of an upper surface of the insulation film atan area not provided with the first electrode and theelectric-charge-injection inhibiting layer, and a second electrode layerprovided on a side of an upper surface of the organic semiconductorlayer.
 22. An organic luminescence transistor device comprising asubstrate, an assistance electrode layer provided on a side of an uppersurface of the substrate, an insulation film provided on a side of anupper surface of the assistance electrode layer, a first electrodeprovided locally on a side of an upper surface of the insulation film,the first electrode covering an area of a predetermined size, anelectric-charge-injection inhibiting layer provided on an upper surfaceof the first electrode, the electric-charge-injection inhibiting layerhaving a shape larger than that of the first electrode in a plan view, aluminescent layer provided on the side of an upper surface of theinsulation film at an area not provided with the first electrode or theelectric-charge-injection inhibiting layer and on an upper surface ofthe electric-charge-injection inhibiting layer, and a second electrodelayer provided on a side of an upper surface of the luminescent layer,wherein the luminescent layer includes anelectric-charge-injection-layer material.
 23. An organic luminescencetransistor device comprising a substrate, an assistance electrode layerprovided on a side of an upper surface of the substrate, an insulationfilm provided on a side of an upper surface of the assistance electrodelayer, a first electrode provided locally on a side of an upper surfaceof the insulation film, the first electrode covering an area of apredetermined size, an electric-charge-injection inhibiting layerprovided on an upper surface of the first electrode, theelectric-charge-injection inhibiting layer having a shape larger thanthat of the first electrode in a plan view, a luminescent layer providedon the side of an upper surface of the insulation film at an area notprovided with the first electrode or the electric-charge-injectioninhibiting layer, and a second electrode layer provided on a side of anupper surface of the luminescent layer, wherein the luminescent layerincludes an electric-charge-injection-layer material.
 24. An organicluminescence transistor device comprising a substrate, an assistanceelectrode layer provided on a side of an upper surface of the substrate,an insulation film provided on a side of an upper surface of theassistance electrode layer, a first electrode provided locally on a sideof an upper surface of the insulation film, the first electrode coveringan area of a predetermined size, an electric-charge-injection inhibitinglayer provided on an upper surface of the first electrode, theelectric-charge-injection inhibiting layer having a shape larger thanthat of the first electrode in a plan view, a luminescent layer providedon the side of an upper surface of the insulation film at an area notprovided with the first electrode or the electric-charge-injectioninhibiting layer, and a second electrode layer provided on a side of anupper surface of the electric-charge-injection inhibiting layer and on aside of an upper surface of the luminescent layer, wherein theluminescent layer includes an electric-charge-injection-layer material.